Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF4/H2

Abstract

Polycrystalline silicon was deposited on Corning 7059 glass by remote plasma chemical vapor deposition using SiF2/H2. Raman spectroscopy indicated a crystalline fraction of 85% in films deposited at a substrate temperature of 350 °C. Thin film transistors made of this material exhibited a field effect mobility of 7.5 cm2/V s and a threshold voltage of 6.1 V.