IEEE Electron Device Letters · 1981 · 16 citations · 8 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingIntegrated Circuit DesignIntegrated Circuit FabricationSemiconductor Device MaterialsDevice FabricationSelf-aligned ProcessesSelf-aligned Structures
A virtual self-aligned process for fabricating IGFET's (or MISFET's) has been developed. Devices fabricated on semiinsulating InP substrates using this process show: (i) square-law characteristics, (ii) an inverse-relationship between transconductance and gate length, and (iii) high surface channel electron mobilities on the order of 1000 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /v.sec.
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