Applied Physics Letters · 2008 · 69 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsThin FilmsAmorphous MaterialsDefects In Electronic MaterialsOptical Thin FilmsOxide SemiconductorsSemiconductor DefectsThin Film AnnealingAmorphous Oxide SemiconductorsAmorphous OxidesAmorphous Thin FilmsOxygen VacanciesOxygen Vacancies In Metal OxidesPhotoluminescencePhotoluminescence SpectroscopyThin Oxide Films
Amorphous HfO2 films prepared by e-beam deposition exhibited room-temperature photoluminescence (PL) in the visible range, i.e., at ∼620 and 700nm, due to oxygen vacancies involved during deposition. This PL can be enhanced by two orders in intensity by crystallizing the amorphous films in flowing argon, where a large amount of oxygen vacancies were introduced, and can be diminished by removal of the oxygen vacancies by annealing HfO2 films in oxygen. This study could help understand the defect-property relationship and provides ways to tune the PL property of HfO2 films.
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Vacancy and interstitial defects in hafnia
Adam S. Foster, F. López Gejo, Alexander L. Shluger et al. · Physical review. B, Condensed matter · 2002 · 638 citations · Full text
Defect energy levels in HfO2 high-dielectric-constant gate oxide
K. Xiong, John Robertson, Michael C. Gibson et al. · Applied Physics Letters · 2005 · 505 citations · Full text