Japanese Journal of Applied Physics · 1991 · 13 citations · 3 references
EngineeringTa 2Thin Film Process TechnologyChemical DepositionChemical EngineeringIndium-tin OxideDielectric FilmThin Film ProcessingMaterials ScienceMaterials EngineeringRf Reactive SputteringOxide ElectronicsMicroelectronicsMaterial AnalysisSurface ScienceApplied PhysicsThin FilmsChemical Vapor DepositionBlackening Effects
When Ta 2 O 5 dielectric film was deposited on an indium-tin-oxide (ITO)-coated glass substrate by rf reactive sputtering, the blackening of ITO was observed. It was confirmed that the residual gas during sputtering is related to the blackening of ITO. The presputtering in argon-oxygen mixture gas and the following evacuation to basal pressure (less than 1×10 -6 Torr) yield Ta 2 O 5 films without ITO blackening.
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