Deposition of 3C-SiC films using ECR plasma of methylsilane

Epitaxial growth and electric characteristics of cubic SiC on silicon

Shigehiro Nishino, H. Suhara, H. Ono et al. · Journal of Applied Physics · 1987 · 215 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition

I. Golecki, F. Reidinger · Applied Physics Letters · 1992 · 175 citations

Materials Engineering, Semiconductors, Materials Science +13

Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa et al. · Journal of Applied Physics · 1979 · 134 citations

Optical Materials, Engineering, Electroluminescence Efficiency +19

Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

C. W. Liu, Johannes Sturm · Journal of Applied Physics · 1997 · 103 citations

Tilted Si, Engineering, Semiconductor Materials +16

High-temperature ion beam synthesis of cubic SiC

B. Daudin, M. Dupuy, A. Ermolieff et al. · Journal of Applied Physics · 1990 · 77 citations

Materials Engineering, Materials Science, High-dose Carbon Implantation +11