Japanese Journal of Applied Physics · 2005 · 117 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilityMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsFerroelectric Field-effect TransistorsFerroelectric SemiconductorsGate-dependent Current-voltage BehaviorLong-term Data RetentionLong-term Record RetentionMemory Retention IntervalMetal-semiconductor Field-effect TransistorsRetention Characteristics
Self‑aligned‑gate Pt/SrBi₂Ta₂O₉/HfAlO/Si MFIS field‑effect transistors were fabricated. The MFIS FETs exhibited steep I_d–V_g characteristics comparable to non‑self‑aligned devices, and achieved retention times exceeding 33 days with on/off I_d ratios above 10⁵, the longest memory retention reported for ferroelectric‑gate FETs.
Self-aligned-gate Pt/SrBi 2 Ta 2 O 9 /HfAlO/Si metal/ferroelectric/insulator/semiconductor (MFIS) field-effect transistors (FETs) were fabricated. Drain current ( I d ) versus gate voltage curves of the MFIS FETs showed almost the same steepness as that of a non-self-aligned-gate Pt/HfAlO/Si metal/insulator/semiconductor FET. Long retention times with large on- and off-state I d ratios were obtained for the MFIS FETs. The retention times more than 33 days with an on- and off-state I d ratio over 10 5 were demonstrated for the self-aligned-gate MFIS FET with a 2-µm-long and 80-µm-wide gate. This device showed the longest memory retention among all of the ferroelectric-gate FETs reported ever before.
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Eisuke Tokumitsu, Gen Fujii, Hiroshi Ishiwara · Japanese Journal of Applied Physics · 2000 · 95 citations
Tadahiko Hirai, Yoshihide Fujisaki, Kazuhito Nagashima et al. · Japanese Journal of Applied Physics · 1997 · 70 citations