Philosophical Magazine B · 1987 · 171 citations · 15 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSemiconductor MaterialsAmorphous SemiconductorsDefects In Electronic MaterialsDopingSemiconductor DefectsSemiconductor PhysicsSilicon MaterialsAmorphous SiliconCharge InjectionCharge Symmetry BreakingDangling Bond DefectsElectronic Density Of StatesSilicon DefectsSilicon DopingSilicon Physics
Abstract A microscopic model based on charge-induced breaking of weak Si-Si bonds is proposed as an explanation for the experimentally observed increase of the dangling-bond density in a-Si: H upon illumination, charge injection, and doping. Energetic aspects of the conversion between weak and dangling bonds and implications for the electronic density of states of a-Si: H are described, and the relation of the model to negative4 defects in this material is discussed.
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Doping and the Fermi Energy in Amorphous Silicon
R. A. Street · Physical Review Letters · 1982 · 500 citations
Metastable Defects in Amorphous-Silicon Thin-Film Transistors
A.R. Hepburn, Jessica Marshall, C. Main et al. · Physical Review Letters · 1986 · 137 citations