Dangling Bond Defect is a point defect in amorphous semiconductors characterized by an unsaturated covalent bond at a broken lattice site, where a valence electron lacks a bonding partner, creating localized electronic states within the bandgap.
430
Publications
23.6K
Citations
1.1K
Authors
390
Institutions
Publications per year
2017–2026
33
Variants
Dangling Bond Defect
Parents
Publications
430
1–5 of 430
Authors
1.1K
- MS
15
h-index
- PM
13
h-index
- JR
11
h-index
- VV
11
h-index
- AS
10
h-index
1–5 of 1.1K
Institutions
390
Pennsylvania State University
State College, United States
19 h-index
63 publications
3K citations
KU Leuven
Leuven, Belgium
16 h-index
51 publications
2.2K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
15 h-index
24 publications
2.8K citations
Palo Alto Research Center
Palo Alto, United States
14 h-index
29 publications
1.7K citations
Centre National de la Recherche Scientifique
Paris, France
14 h-index
49 publications
2.2K citations
National Laboratory of the Rockies
Golden, United States
13 h-index
31 publications
2.3K citations
Sandia National Laboratories
Albuquerque, United States
12 h-index
29 publications
1.5K citations
University of Cambridge
Cambridge, United Kingdom
12 h-index
27 publications
1.7K citations
1–8 of 390
Venues
- Physical review. B, Condensed matter
PRB · 68 publications · 4.8K citations
36
h-index
- Applied Physics Letters
70 publications · 3.5K citations
35
h-index
- Journal of Applied Physics
46 publications · 3.5K citations
25
h-index
- Philosophical Magazine B
31 publications · 2K citations
22
h-index
- Physical Review Letters
PRL · 25 publications · 2.1K citations
21
h-index
1–5