Applied Physics Letters · 1981 · 475 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopyAmorphous MaterialsAmorphous SemiconductorsDefects In Electronic MaterialsSemiconductor DefectsSemiconductor PhysicsSilicon MaterialsAmorphous SiliconDangling Bond DefectsHydrogenated Amorphous SiliconSilicon DefectsSilicon Physics
After intensive and long illumination of undoped a-Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light-induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.
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Photoemission studies on <i>in situ</i> prepared hydrogenated amorphous silicon films
B. von Roedern, L. Ley, M. Cardona et al. · Philosophical Magazine B · 1979 · 127 citations