Applied Physics Letters · 1994 · 43 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptoelectronic MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCharge Carrier DensityDiode Laser Threshold CurrentDouble Heterostructure DevicesDouble HeterostructuresHeterostructure LasersLiquid Phase EpitaxyLow-threshold Current LasersThreshold Behavior
Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid-phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180 K. The blue shift of lasing modes was observed with current. This was explained by the increase of the carrier density in the active region above threshold due to intervalence band absorption.
8
New III-V double-heterojunction laser emitting near 3.2μm
H. Mani, G. Boissier, A. Joullié et al. · Electronics Letters · 1988 · 23 citations
InAsPSb/InAs diode laser emitting in the 2.5μm range
S. Akiba, Yuichi Matsushima, T. Iketani et al. · Electronics Letters · 1988 · 20 citations