Electronics Letters · 1988 · 20 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersDouble Heterostructure DevicesDouble HeterostructuresGallium Nitride Light-emitting DiodesHeterostructure DevicesHeterostructure LasersHeterostructure MaterialsHeterostructure OptoelectronicsQuantum Well Laser Diodes
A double heterostructure consisting of InAsPSb alloys was made by LPE-growth on InAs substrates. Lasing action was confirmed at 15–55K, where the emission wavelength was 2.5–2.7μm.
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