Japanese Journal of Applied Physics · 1980 · 27 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsAmbient Temperature EffectsCurrent DensityDouble HeterostructuresHeterostructure DevicesHeterostructure LasersLiquid Phase EpitaxySemiconductor Laser FabricationTemperature Dependence Of Laser Performance
Double heterostructure wafers composed of p-InAs0.82P0.10Sb0.08/n-InAs0.94P0.04Sb0.02/n-InAs0.82P0.12Sb0.06 were grown on (001) oriented n-InAs substrates by liquid phase epitaxy. Stripe geometry lasers were fabricated from these wafers. The emission wavelength and the threshold current density of these lasers at 77 K were 3.0 µm and about 3 kA/cm2, respectively. Their threshold current density (Jth) was quite sensitive to the ambient temperature; the characteristic temperature T0, defined as T0=ΔT/Δ In Jth was 23 K in the temperature range between 77 K and 145 K.