The potential of SiC and GaN for application in high speed devices

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

J. Kolník, İsmail H. Oğuzman, Kevin F. Brennan et al. · Journal of Applied Physics · 1995 · 328 citations

Natural Sciences, Materials Science, Physics +17

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 273 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors

M. S. Shur · Electronics Letters · 1976 · 186 citations

Engineering, Electrical Engineering, Microelectronics +16

Noise characteristics of gallium arsenide field-effect transistors

H. Statz, H. A. Haus, R.A. Pucel · IEEE Transactions on Electron Devices · 1974 · 154 citations

Engineering, Electrical Engineering, Microelectronics +16

4H-SiC MESFET's with 42 GHz f/sub max/

S. Sriram, G. Augustine, Albert A. Burk et al. · IEEE Electron Device Letters · 1996 · 70 citations

Engineering, Electrical Engineering, Materials Science +17