Japanese Journal of Applied Physics · 2006 · 47 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMemory DevicesMemristive MaterialsMetal-semiconductor ContactsContact MaterialsContact ReliabilityHigh-density Memory MaterialsMemory MaterialsMetal Thin FilmsPhase-change MemoryThin Oxide FilmsUniform Current Distribution
An advanced bottom electrode contact (BEC) was successfully developed for reliable high-density 256Mb phase-change random access memory (PRAM) using a ring-type contact scheme. This advanced ring-type BEC was prepared by depositing very thin TiN films inside a contact hole, after which core dielectrics were uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce reset current while maintaining a low set resistance and a uniform cell distribution. Thus, it has been clearly demonstrated that the use of the ring-type contact technology is very feasible for high-density PRAM beyond 256 Mb.