Yoon-Jong Song - Concepedia

Author

Yoon-Jong Song

Samsung (South Korea)

Also Known As

HyunChul Shin, Yoon-Jong Song, Yoonjong Song

Publications

850

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)

About

Yoon-Jong Song is an author at Samsung (South Korea) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	706
2	Electrical Engineering	7	7	706
3	Computer Engineering	6	6	677
4	Applied Physics	4	4	652
5	Materials Engineering	1	1	29

Yoon-Jong Song

Publications

766

Citations

H-Index

Page 1

	Year	Citations
A crossbar array of magnetoresistive memory devices for in-memory computing Seungchul Jung, Hyungwoo Lee, Sungmeen Myung, Nature SpintronicsMagnetismElectrical EngineeringEngineeringNon-volatile Memory	2022	552
Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory Fai Yeung, Su‐Jin Ahn, Young-Nam Hwang, Japanese Journal of Applied Physics Non-volatile MemoryEngineeringEmerging Memory TechnologyPhase Change MemoryGe 2	2005	55
Highly Reliable Ring-Type Contact for High-Density Phase Change Memory Changwook Jeong, Su‐Jin Ahn, Young-Nam Hwang, Japanese Journal of Applied Physics	2006	46
Reliability perspectives for high density PRAM manufacturing Su Jin Ahn, Yoon-Jong Song, Hoon Jeong, EngineeringPhase Change MemoryReliability EngineeringMemory DeviceElectronic Packaging	2011	29
A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit Byung-Gil Jeon, Mun-Kyu Choi, Yoon-Jong Song, IEEE Journal of Solid-State Circuits Data Protection CircuitElectrical Engineering4-Mb FramEngineeringReference Scheme	2000	25
Current status and future prospect of Phase Change Memory Byeungchul Kim, Yoon-Jong Song, Su‐Jin Ahn, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronics	2011	16
A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme Mun-Kyu Choi, Byung-Gil Jeon, Nakwon Jang, IEEE Journal of Solid-State Circuits Non-volatile MemoryElectrical EngineeringEngineeringConventional Fram Device0.25-μM 3.0-V 1T1c	2002	16
A 14.7Mb/mm<sup>2</sup> 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference El Mehdi Boujamaa, Samsudeen Mohamed Ali, Steve Ngueya Wandji,	2020	14
What Lies Ahead for Resistance-Based Memory Technologies? Yoon-Jong Song, Gitae Jeong, In-Gyu Baek, Computer SpintronicsElectrical EngineeringNon-volatile MemoryEngineeringNanoelectronics	2013	13

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