N‐type doping of HVPE‐grown GaN using dichlorosilane

Abstract

Abstract N‐type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle. Dichlorosilane was found to be a convenient Si doping source for HVPE growth of GaN. High electron mobilities as well as good optical and structural properties are obtained in the doping range of 6 × 10 17 cm –3 to 8 × 10 18 cm –3 using dichlorosilane. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)