Reduced order model for the CVD of epitaxial silicon from silane and chlorosilanes

Optimization of parameters for semiempirical methods I. Method

James J. P. Stewart · Journal of Computational Chemistry · 1989 · 7.6K citations

Natural Sciences, Materials Science, Computational Mechanics +4

The growth of crystals and the equilibrium structure of their surfaces

W. K. Burton, N. Cabrera, F. C. Frank · Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences · 1951 · 5.3K citations

Natural Sciences, Physics, Condensed Matter Physics +16

Optimization of parameters for semiempirical methods II. Applications

James J. P. Stewart · Journal of Computational Chemistry · 1989 · 3.7K citations

Natural Sciences, Chemistry, Computational Chemistry +9

Thermochemical kinetics

D.P. · Journal of Molecular Structure · 1970 · 3.6K citations

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

F. C. Eversteyn, P. J. Severin, C. H. J. v. d. Brekel et al. · Journal of The Electrochemical Society · 1970 · 273 citations

Engineering, Materials Engineering, Materials Science +10