Applied Physics Letters · 1985 · 40 citations · 7 references
SemiconductorsPhotonicsWide-bandgap SemiconductorIi-vi SemiconductorEngineeringLaser SciencePhysicsSemiconductor Superlattice LaserNanoelectronicsApplied PhysicsLaser ApplicationsSuper-intense LasersMolecular Beam EpitaxyInjection LaserOptoelectronicsCompound SemiconductorBand GapWavelengths λ
A new type of semiconductor superlattice laser grown by molecular beam epitaxy is realized in GaAs. The active region of the injection laser consists of alternating n and p Dirac-delta doped layers resulting in a sawtooth-shaped conduction-band and valence-band edge. The band gap of this new GaAs superlattice is smaller than the GaAs bulk band gap. Room-temperature operation of broad-area GaAs sawtooth superlattice (STS) injection lasers is demonstrated at a wavelength of 905 nm. The threshold current density of the STS laser is 2.2 kA/cm2.
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