Surface morphology studies on sublimation grown GaN by atomic force microscopy

The growth of crystals and the equilibrium structure of their surfaces

W. K. Burton, N. Cabrera, F. C. Frank · Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences · 1951 · 5.3K citations

Natural Sciences, Physics, Condensed Matter Physics +16

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Shortest wavelength semiconductor laser diode

Isamu Akasaki, S. Sota, Hiroshi Sakai et al. · Electronics Letters · 1996 · 462 citations

Engineering, Electrical Engineering, Materials Science +17

InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 342 citations

Engineering, Electrical Engineering, Materials Science +17

Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

S. Porowski, I. Grzegory · Journal of Crystal Growth · 1997 · 184 citations

Engineering, Materials Engineering, Materials Science +13