Copper chemical mechanical polishing using a slurry-free technique

Full copper wiring in a sub-0.25 μm CMOS ULSI technology

D. Edelstein, J. Heidenreich, R. Goldblatt et al. · 2002 · 352 citations

Engineering, Computer Engineering, Electrical Engineering +17

A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra et al. · 2002 · 101 citations

Engineering, Computer Engineering, Electrical Engineering +17

Dependency of dishing on polish time and slurry chemistry in Cu CMP

Việt Hùng Nguyễn, H VanKranenburg, P.H. Woerlee · Microelectronic Engineering · 2000 · 64 citations

Engineering, Materials Engineering, Materials Science +8

Chemical mechanical polishing with fixed abrasives using different subpads to optimize wafer uniformity

Peter G. van der Velden · Microelectronic Engineering · 2000 · 49 citations

Engineering, Materials Engineering, Materials Science +16