Existence of a stable intermixing phase for monolayer Ge on Si(001)

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

D. J. Eaglesham, M. Cerullo · Physical Review Letters · 1990 · 2K citations

Materials Engineering, Materials Science, Engineering +15

The physics of semiconductor devices

R. H. Rediker · Solid-State Electronics · 1970 · 1.6K citations

Semiconductors, Semiconductor Devices, Electrical Engineering +5

Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations

Engineering, Crystal Growth Technology, Silicon On Insulator +18

Scanning tunneling microscopy of Si(001)

Robert J. Hamers, R. M. Tromp, J. E. Demuth · Physical review. B, Condensed matter · 1986 · 851 citations

Materials Science, Defect Tolerance, High Density +14

Influence of surfactants in Ge and Si epitaxy on Si(001)

M. Copel, M. C. Reuter, M. Horn von Hoegen et al. · Physical review. B, Condensed matter · 1990 · 344 citations

Materials Engineering, Materials Science, Engineering +12