Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current - Concepedia

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Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

23

Citations

25

References

2013

Year

Jaan Aarik, Tõnis Arroval, Lauri Aarik, Raul Rammula, Aarne Kasikov, Hugo Mändar, Boris Hudec, K. Hušeková, K. Fröhlich

Journal of Crystal Growth

Materials EngineeringMaterials ScienceMaterial AnalysisEngineeringSurface ScienceApplied PhysicsRutile-phase Tio2Low LeakageEpitaxial GrowthAtomic Layer Deposition

References

	Year	Citations

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