Publication | Closed Access
At-wavelength metrology on Sc-based multilayers for the UV and water window
16
Citations
24
References
2003
Year
Multilayer Growth ConditionsOptical MaterialsEngineeringOptical TestingLaser ApplicationsOptical MetrologySemiconductorsMultilayer CoatingsOptical PropertiesPhotonic MetrologyEpitaxial GrowthMaterials SciencePhotonicsWater WindowNormal Incidence OpticsPhysicsSc-based MultilayersSemiconductor MaterialDepth-graded Multilayer CoatingAt-wavelength MetrologySurface CharacterizationSurface ScienceApplied PhysicsThin FilmsOptical EngineeringOptoelectronics
Due to the unusual behavior of its optical constants the first transition element Sc with atomic configuration (3p<sup>6</sup>4s<sup>2</sup>3d) is a very attractive candidate for multilayer coatings optimized for the anomalous dispersion region of the 3p-3d transition around 28 eV (45 nm) and for the vicinity of the 2p absorption edge at 398 eV (3.12 nm), respectively. New normal incidence reflectivity data for Sc/Si at Sc 3p are shown with peak values up to 54% and for Cr/Sc at Sc 2p with peak values up to 17% are presented. The influence of optical performance on multilayer growth conditions and parameters are discussed in detail and the necessity of at-wavelength metrology for the final characterization is demonstrated. The results encourage e.g. applications for normal incidence optics used for high-power pulsed UV and x-ray laser systems and for x-ray microscopes operated in the water window.
| Year | Citations | |
|---|---|---|
1986 | 163 | |
2000 | 154 | |
1988 | 105 | |
2001 | 99 | |
2001 | 93 | |
1986 | 91 | |
1998 | 66 | |
2003 | 61 | |
1998 | 60 | |
<title>Improved reflectance and stability of Mo/Si multilayers</title> S. Bajt, Jennifer Alameda, Troy W. Barbee, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronics | 2001 | 51 |
Page 1
Page 1