Schottky type photodiodes as detectors in the VUV and soft x-ray range

Abstract

The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 to 3500 eV. For silicon photodiodes strong radiation-induced effects were found. GaAsP and GaP Schottky diodes show remarkable stability and high quantum efficiency. Use of Schottky diodes for spectroscopic and radiometric measurements is discussed.