IEEE Electron Device Letters · 2013 · 149 citations · 13 references
Raised-ge-source TfetElectrical EngineeringRandom Dopant FluctuationsEngineeringRf SemiconductorPhysicsNanoelectronicsElectronic EngineeringIdeal MosfetApplied PhysicsOptimized Tfet DesignBias Temperature InstabilityPower Semiconductor DevicePower ElectronicsMicroelectronicsSemiconductor Device
The impact of random dopant fluctuations (RDF) on the performance of an optimized TFET design comprising a raised germanium (Ge) source region is investigated via 3-D TCAD simulation. The RDF within the source region results in degraded subthreshold swing and lower turn-on voltage for the raised-Ge-source TFET design. In addition, drain-induced barrier tunneling is mitigated with the raised source design. An optimized raised-Ge-source TFET is projected to provide for lower energy operation at frequencies up to 500 MHz when compared with an ideal MOSFET.
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