The role of intercarrier scattering in excited silicon

Topics in Applied Physics

Edward M. Eyring · Nuclear Technology · 1978 · 1.3K citations

Experimental Nuclear Physics, Nuclear Physics, Physics +10

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Solid-State Electronics · 1981 · 266 citations

Electrical Engineering, Engineering, Injection Level +10

The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

Sheng S. Li, W. R. Thurber · Solid-State Electronics · 1977 · 264 citations

Electrical Engineering, Engineering, Dopant Density +7

Hole drift velocity in silicon

G. Ottaviani, L. Reggiani, Claudio Canali et al. · Physical review. B, Solid state · 1975 · 233 citations

Semiconductors, Spherical Nonparabolic Band, Semiconductor Technology +12

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Microelectronics Reliability · 1982 · 217 citations

Electrical Engineering, Engineering, Injection Level +10