Statistics
Publications
56
Citations
1.8K
H-Index
24
Active since
1970
L. Reggiani is an author at Istituto Nazionale per la Fisica della Materia specializing in physics, applied physics, and engineering.
Publications per year
1970–2009
56
56
Hole drift velocity in silicon
G. Ottaviani, L. Reggiani, Claudio Canali et al. · Physical review. B, Solid state · 1975 · 233 citations
Semiconductors, Spherical Nonparabolic Band, Semiconductor Technology +12
Diffusion coefficient of electrons in silicon
R. Brunetti, Carlo Jacoboni, F. Nava et al. · Journal of Applied Physics · 1981 · 158 citations · Full text
Semiconductors, Longitudinal Diffusion Coefficient, Engineering +13
Hole drift velocity in germanium
L. Reggiani, Claudio Canali, F. Nava et al. · Physical review. B, Solid state · 1977 · 116 citations
Monte Carlo algorithm for hot phonons in polar semiconductors
Paolo Lugli, Carlo Jacoboni, L. Reggiani et al. · Applied Physics Letters · 1987 · 93 citations
Categoryquantum Electronics, Charge Excitations, Engineering +16
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