G. Ottaviani

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Publications

Citations

5.6K

H-Index

Active since

1968

Affiliations

Istituto Nazionale per la Fisica della Materia(Current)

University of Modena and Reggio Emilia

IBM Research - Thomas J. Watson Research Center

Semiconductor Manufacturing International (Italy)

Hodges University

G. Ottaviani is an author at Istituto Nazionale per la Fisica della Materia specializing in materials science, natural sciences, and semiconductor materials.

Publications per year

1968–2006

Publications

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

C. Canali, G. Majni, R. Minder et al. · IEEE Transactions on Electron Devices · 1975 · 645 citations

Engineering, Electrical Engineering, Physics +12

Electron drift velocity in silicon

C. Canali, Carlo Jacoboni, F. Nava et al. · Physical review. B, Solid state · 1975 · 502 citations

Natural Sciences, Materials Science, Physics +14

Electronic properties on silicon-transition metal interface compounds

C. Calandra, O. Bisi, G. Ottaviani · Surface Science Reports · 1985 · 277 citations

Natural Sciences, Chemistry, Materials Science +14

Drift velocity of electrons and holes and associated anisotropic effects in silicon

C. Canali, G. Ottaviani, A. Alberigi Quaranta · Journal of Physics and Chemistry of Solids · 1971 · 259 citations

Engineering, Materials Science, Physics +14

Review of binary alloy formation by thin film interactions

G. Ottaviani · Journal of Vacuum Science and Technology · 1979 · 257 citations

Natural Sciences, Materials Engineering, Materials Science +17

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