Heteroepitaxial growth of 3C–SiC using HMDS by atmospheric CVD

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth and electric characteristics of cubic SiC on silicon

Shigehiro Nishino, H. Suhara, H. Ono et al. · Journal of Applied Physics · 1987 · 215 citations

Engineering, Materials Engineering, Materials Science +17

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si

Z. C. Feng, A. Mascarenhas, W. J. Choyke et al. · Journal of Applied Physics · 1988 · 176 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3<i>C</i>-SiC on Si

W. J. Choyke, Zhe Chuan Feng, J. A. Powell · Journal of Applied Physics · 1988 · 151 citations

Natural Sciences, Materials Engineering, Materials Science +17

Luminescence of Donor-Acceptor Pairs in Cubic SiC

W. J. Choyke, Lyle Patrick · Physical review. B, Solid state · 1970 · 127 citations

Natural Sciences, Materials Science, Electronic Materials +15