IEEE Electron Device Letters · 1986 · 28 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringPerformance MeasurementHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesFrequency-dependent GainGain CharacterizationGain MeasurementHigh-frequency PerformanceMicrowave Amplifier CharacterizationMicrowave TransistorsMillimeter-wave Integrated CircuitsMillimeter-wave Transistors
Estimates of transistor performance at millimeter-wave frequencies are generally based on extrapolation of microwave gain measurements at a gain roll-off of 6 dB per frequency octave. In this paper we show that a complex-conjugate pole pair leads to a 12-dB/octave gain roll-off in the millimeter-wave region. As a result the actual <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f_{\max}</tex> of millimeter-wave transistors can be considerably less than that determined using extrapolation of gain measurements.
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Millimeter-wave low-noise high electron mobility transistors
P.C. Chao, S. C. Palmateer, P.M. Smith et al. · IEEE Electron Device Letters · 1985 · 56 citations