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Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

S. Claramunt, Qian Wu, M. Maestro, M. Porti, Mireia Bargalló González, J. Martín-Martínez, F. Campabadal, M. Nafrı́a

Microelectronic Engineering · 2015 · 25 citations · 8 references

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8

Nanoionics-based resistive switching memories

Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations

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Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Yuchao Yang, Feng Pan, Qi Liu et al. · Nano Letters · 2009 · 873 citations

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Electrode dependence of filament formation in HfO2 resistive-switching memory

Kuan-Liang Lin, Tuo‐Hung Hou, Jiann Shieh et al. · Journal of Applied Physics · 2011 · 300 citations

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Three‐Dimensional Integration of Organic Resistive Memory Devices

Sunghoon Song, Byungjin Cho, Tae‐Wook Kim et al. · Advanced Materials · 2010 · 234 citations

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Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Mario Lanza, G. Bersuker, M. Porti et al. · Applied Physics Letters · 2012 · 173 citations · Full text

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