M. Maestro

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Alessandro Bricalli, Elia Ambrosi, Mario Laudato et al. · IEEE Transactions on Electron Devices · 2017 · 85 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

Alessandro Bricalli, Elia Ambrosi, Mario Laudato et al. · IEEE Transactions on Electron Devices · 2017 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio

Alessandro Bricalli, Elia Ambrosi, Mario Laudato et al. · 2016 · 70 citations

Engineering, Materials Engineering, Materials Science +15

Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO₂-Based RRAM

Mireia Bargalló González, J. Martín-Martínez, M. Maestro et al. · IEEE Transactions on Electron Devices · 2016 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

S. Claramunt, Qian Wu, M. Maestro et al. · Microelectronic Engineering · 2015 · 25 citations · Full text

Natural Sciences, Materials Science, Physics +16