SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio

Abstract

Resistive switching memory (RRAM) is among the most promising technologies for storage class memory (SCM) and embedded nonvolatile memory (eNVM). Feasibility of RRAM as SCM and/or embedded memory requires large on/off ratio, good endurance, high retention, and the availability of a robust select element for crossbar array integration. This work presents Ti/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> RRAM with high on/off ratio (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> ), good endurance (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ), high uniformity and strong retention (260°C for 1 hour), thanks to the high SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> band gap. Ag/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> devices show volatile switching with high on/off ratio (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ) and bidirectional operation applicable to select devices in crossbar arrays.