Light emission from interface traps and bulk defects in SiC MOSFETs

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 684 citations

Engineering, Electrical Engineering, Materials Science +17

Charge pumping in MOS devices

J.S. Brugler, P.G.A. Jespers · IEEE Transactions on Electron Devices · 1969 · 499 citations

Engineering, Electrical Engineering, Materials Science +17

Improved oxidation procedures for reduced SiO2/SiC defects

Lori A. Lipkin, John W. Palmour · Journal of Electronic Materials · 1996 · 237 citations

Natural Sciences, Materials Engineering, Materials Science +14

Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping

A. Goetzberger, J.C. Irvin · IEEE Transactions on Electron Devices · 1968 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

Anomalously High Density of Interface States Near the Conduction Band in SiO<sub>2</sub>/4H-SiC MOS Devices

Mrinal K. Das, Benjamin S. Um, James A. Cooper · Materials science forum · 2000 · 63 citations · Full text

Engineering, Materials Science, Physics +17