Multi feed seed (MFS) high pressure crystallization of 1–2in GaN

Limitations to band gap tuning in nitride semiconductor alloys

I. Gorczyca, T. Suski, N. E. Christensen et al. · Applied Physics Letters · 2010 · 46 citations

Natural Sciences, Materials Science, Physics +14

Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes

P. Perlin, Katarzyna Holc, M. Sarzyński et al. · Applied Physics Letters · 2009 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

M. Sarzyński, M. Kryśko, G. Targowski et al. · Applied Physics Letters · 2006 · 28 citations

Engineering, Materials Engineering, Materials Science +17

High pressure–high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport

Michał Boćkowski, Paweł Strąk, Paweł Kempisty et al. · Journal of Crystal Growth · 2007 · 23 citations

Engineering, Materials Engineering, Materials Science +11

High nitrogen pressure solution growth of bulk GaN in “feed‐seed” configuration

Michał Boćkowski, I. Grzegory, B. Łucznik et al. · physica status solidi (a) · 2011 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +15