Paweł Kempisty

Electrostatic condition for the termination of the opposite face of the slab in density functional theory simulations of semiconductor surfaces

Stanisław Krukowski, Paweł Kempisty, Paweł Strąk · Journal of Applied Physics · 2009 · 53 citations

Natural Sciences, Materials Science, Semiconductor Devices +16

<i>Ab initio</i> studies of electronic properties of bare GaN(0001) surface

Paweł Kempisty, Stanisław Krukowski, Paweł Strąk et al. · Journal of Applied Physics · 2009 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Homoepitaxial growth of HVPE-GaN doped with Si

Małgorzata Iwińska, Tomasz Sochacki, Mikolaj Amilusik et al. · Journal of Crystal Growth · 2016 · 44 citations

Engineering, Materials Engineering, Materials Science +12

Evolution of the free energy of the GaN(0001) surface based on first-principles phonon calculations

Paweł Kempisty, Yoshihiro Kangawa · Physical review. B./Physical review. B · 2019 · 44 citations

Natural Sciences, Materials Science, Physics +17

Principal physical properties of GaN/AlN multiquantum well systems determined by density functional theory calculations

Paweł Strąk, Paweł Kempisty, Maria Ptasinska et al. · Journal of Applied Physics · 2013 · 40 citations

Natural Sciences, Materials Science, Physics +17