Yoshihiro Kangawa - Concepedia

Author

Yoshihiro Kangawa

Kyushu University ORCID

Also Known As

Kangawa, Yoshihiro, Y Kangawa, Y. Kangawa, Yoshihiro KANGAWA, Yoshihiro Kangawa

233

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Kyushu University Nagoya University Tokyo University of Agriculture and Technology Mie University Polish Academy of Sciences

About

Yoshihiro Kangawa is an author at Kyushu University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	46	1.3K
2	Applied Physics	20	42	1.2K
3	Chemistry	9	9	212
4	Chemical Engineering	3	3	114
5	Natural Sciences	2	2	62

Yoshihiro Kangawa

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces Yoshihiro Kangawa, Tomonori Ito, Atsushi Taguchi, Surface Science SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringNew Theoretical Approach	2001	136
Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell Hitoshi Matsuo, Satoshi Nakano, Lijun Liu, Journal of Crystal Growth Materials ScienceChemical EngineeringEngineeringSolidificationOxygen Incorporation	2008	86
Theoretical approach to influence of As2 pressure on GaAs growth kinetics Yoshihiro Kangawa, Tomonori Ito, Yoshiko Someya Hiraoka, Surface Science Ii-vi SemiconductorAs2 PressureEngineeringPhysicsCrystal Growth Technology	2002	77
Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth Yoshinao Kumagai, T. Yamane, Toshihiko Miyaji, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials EngineeringMaterials ScienceThermodynamic AnalysisAluminium NitrideHigh Temperature Materials	2003	72
Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1) Yoshihiro Kangawa, Takumi Ito, Atsushi Taguchi, Applied Surface Science Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2002	61
Thermal Conductivity of SiC Calculated by Molecular Dynamics Takahiro Kawamura, Daisuke Hori, Yoshihiro Kangawa, Japanese Journal of Applied Physics Materials ScienceHigh Temperature MaterialsEngineeringTransport PropertiesApplied Physics	2008	52
Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Japanese Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideEngineeringCrystal Growth TechnologyCoherent Growth	2017	46
Evolution of the free energy of the GaN(0001) surface based on first-principles phonon calculations Paweł Kempisty, Yoshihiro Kangawa Physical review. B./Physical review. B Free EnergyWide-bandgap SemiconductorSurface Phase DiagramsEngineeringFirst-principles Phonon Calculations	2019	43
Novel Solution Growth Method of Bulk AlN Using Al and Li$_{3}$N Solid Sources Yoshihiro Kangawa, Ryutaro Toki, Tomoe Yayama, Applied Physics Express Materials ScienceMaterials EngineeringSolution Growth MethodSeed CrystalN Solid Sources	2011	38
Anomalous behavior of excess energy curves of InxGa1−xN grown on GaN and InN Yoshihiro Kangawa, Tomonori Ito, Atsushi Mori, Journal of Crystal Growth Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringExcess Energy Curves	2000	35

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