Yoshihiro Kangawa

A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces

Yoshihiro Kangawa, Tomonori Ito, Atsushi Taguchi et al. · Surface Science · 2001 · 136 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell

Hitoshi Matsuo, Satoshi Nakano, Lijun Liu et al. · Journal of Crystal Growth · 2008 · 86 citations

Materials Science, Chemical Engineering, Engineering +6

Theoretical approach to influence of As2 pressure on GaAs growth kinetics

Yoshihiro Kangawa, Tomonori Ito, Yoshiko Someya Hiraoka et al. · Surface Science · 2002 · 77 citations

Ii-vi Semiconductor, As2 Pressure, Engineering +8

Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth

Yoshinao Kumagai, T. Yamane, Toshihiko Miyaji et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 72 citations

Materials Engineering, Materials Science, Thermodynamic Analysis +12

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Yoshihiro Kangawa, Takumi Ito, Atsushi Taguchi et al. · Applied Surface Science · 2002 · 61 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +9