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Homoepitaxial growth of HVPE-GaN doped with Si
Małgorzata Iwińska,
Tomasz Sochacki,
Mikolaj Amilusik,
Paweł Kempisty,
B. Łucznik,
E. Litwin‐Staszewska,
Julita Smalc‐Koziorowska,
A. Khapuridze,
G. Staszczak,
I. Grzegory,
Journal of Crystal GrowthApplied PhysicsGan Power DeviceHomoepitaxial Growth