G. Staszczak

Homoepitaxial growth of HVPE-GaN doped with Si

Małgorzata Iwińska, Tomasz Sochacki, Mikolaj Amilusik et al. · Journal of Crystal Growth · 2016 · 44 citations

Engineering, Materials Engineering, Materials Science +12

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Katarzyna Pieniak, Henryk Turski, Witold Trzeciakowski et al. · Optics Express · 2020 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

I. Gorczyca, Agata Kamińska, G. Staszczak et al. · Physical Review B · 2010 · 31 citations · Full text

Natural Sciences, Materials Science, Physics +17

Photoluminescence and pressure effects in short period InN/<i>n</i>GaN superlattices

G. Staszczak, I. Gorczyca, T. Suski et al. · Journal of Applied Physics · 2013 · 28 citations

Engineering, Materials Science, Physics +17

Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning

M. Sarzyński, T. Suski, G. Staszczak et al. · Applied Physics Express · 2012 · 27 citations

Engineering, Materials Science, Physics +17