Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Dislocation Interaction, Misfit Dislocations, Applied Physics +2

A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt et al. · IEEE Journal of Solid-State Circuits · 1998 · 220 citations

Resonant-tunneling Diodes, Data Converter, Mixed-signal Integrated Circuit +6

InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices

Kevin J. Chen, K. Maezawa, M. Yamamoto · IEEE Electron Device Letters · 1996 · 136 citations

Materials Engineering, Electrical Engineering, Resonant-tunneling Diodes +14

High-speed and low-power operation of a resonant tunneling logic gate MOBILE

K. Maezawa, Hideaki Matsuzaki, M. Yamamoto et al. · IEEE Electron Device Letters · 1998 · 129 citations

Low-power Electronics, Electrical Engineering, Engineering +11

A Pseudomorphic In_0.53Ga_0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

Tsuguo Inata, Shunichi Muto, Yoshiaki Nakata et al. · Japanese Journal of Applied Physics · 1987 · 108 citations

Materials Science, Room Temperature, Wide-bandgap Semiconductor +14