2009 · 19 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesStatistical ModelingCmos Circuit DesignDevice ModelingDevice SimulationNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesCompact Device ModelingCompact ModelingDevice VariabilityFlickerFlicker NoiseMosfet ModelingMosfet NoiseNoise In Metal-oxide-semiconductor Field-effect Transistors
A compact model has been developed to capture the variability of flicker noise resulting from the reduction in size of state of the art MOSFETs. The underlying physics of flicker noise in small area MOSFETs has been verified by two means: Monte Carlo simulation and analytic modeling. The statistical distribution of flicker noise is reported for the first time, supported by experimental data from two sets of devices with different areas. The developed model is capable of predicting the area dependence of noise at any frequency at desired %Yield.
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Noise modeling for RF CMOS circuit simulation
A.J. Scholten, L.F. Tiemeijer, R. van Langevelde et al. · IEEE Transactions on Electron Devices · 2003 · 379 citations
Random telegraph noise of deep-submicrometer MOSFETs
Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 309 citations
Engineering, Electrical Engineering, Electronic Materials +16