Applied Physics Letters · 1994 · 41 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceNanotechnologyOptoelectronicsSemiconductor MaterialsEpitaxial GrowthQuantum ConfinementQuantum DotsQuantum WellsSemiconductor HeterostructuresSemiconductor NanomaterialsExcitationMetalorganic Vapor Phase EpitaxyPhotoluminescencePhotoluminescence In Quantum WellsQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well StructuresSemiconductor Nanostructures
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
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Self-organized growth of regular nanometer-scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations