Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 25 citations · 8 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSpectroscopyDefects In Electronic MaterialsElectronic Band StructureGamma-ray SpectroscopyRadiation Damage In MaterialsRadiation SpectroscopySemiconductor DefectsHall EffectHall Effect MeasurementsInfrared Absorption SpectraInfrared Absorption SpectroscopyOxygen VacanciesRadiation DefectsRadiation-induced Defect FormationRadiation-induced Defects
Defects induced by irradiation with fast electrons and 60Co gamma-rays in oxygen-rich Ge crystals have been studied by means of infrared absorption, deep level transient spectroscopy (DLTS) and Hall effect measurements. It is found that the vacancy–oxygen (V–O) complex in Ge has three charge states (doubly negative, singly negative and neutral ones) and two corresponding energy levels in the gap at about Ec – 0.21 eV and Ev + 0.27 eV. Three absorption bands at 621.4, 669.1 and 716.2 cm–1 are identified as oxygen-related asymmetrical stretching vibrations for the neutral, singly negatively charged and doubly negatively charged states of the V–O complex, respectively.
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