The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogen

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Engineering, Electrical Engineering, Materials Science +16

Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen

J. I. Pánkové, David Carlson, J. E. Berkeyheiser et al. · Physical Review Letters · 1983 · 455 citations

Natural Sciences, Materials Science, Physics +10

Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

P. M. Mooney, L. J. Cheng, M. Süli et al. · Physical review. B, Solid state · 1977 · 297 citations

Natural Sciences, Materials Science, Physics +17

Deactivation of group III acceptors in silicon during keV electron irradiation

Chih‐Tang Sah, Jack Yuan-Chen Sun, J.J. Tzou et al. · Applied Physics Letters · 1983 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES

CUI SHU-FAN, Peiwen Ge, WU LAN-SHENG · Acta Physica Sinica · 1979 · 34 citations · Full text

Natural Sciences, Materials Science, Physics +17