AlGaN/GaN MISHEMT with hBN as gate dielectric

Enhanced device performance of AlGaN/GaN HEMTs using HfO₂ high-<i>k</i> dielectric for surface passivation and gate oxide

Chang Liu, Eng Fong Chor, L.S. Tan · Semiconductor Science and Technology · 2007 · 181 citations

Engineering, Electrical Engineering, Materials Science +17

Interband transitions, plasmons, and dispersion in hexagonal boron nitride

C. Tarrio, S. E. Schnatterly · Physical review. B, Condensed matter · 1989 · 130 citations

Natural Sciences, Materials Science, Physics +16

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada et al. · Solid-State Electronics · 2006 · 96 citations

Engineering, Electrical Engineering, Materials Science +12

Cubic boron nitride synthesis in low-density supersonic plasma flows

Darren Berns, Mark Cappelli · Applied Physics Letters · 1996 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +15

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. BenMoussa, S. Touati et al. · Diamond and Related Materials · 2006 · 40 citations

Engineering, Electrical Engineering, Materials Science +14