Applied Physics Letters · 1983 · 12 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefectsDefects In Electronic MaterialsDopingSemiconductor DefectsSemiconductor PhysicsSilicon MaterialsCarrier LifetimeDeep-level DefectsDefect Dynamics In Irradiated MaterialsDefect PhysicsDefect StatesDoped SemiconductorsSiliconSilicon Defects
Defect processes were studied in electron-irradiated, Ga-doped silicon using deep level transient spectroscopy. Evidence for the production of a Ga-related defect state is presented. Changes in minority-carrier lifetime are correlated with recovery and growth of defect states in annealing studies of Ga-doped silicon.
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RADIATION DAMAGE IN SEMICONDUCTORS.
P. Baruch · Defense Technical Information Center (DTIC) · 1963 · 564 citations
Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons
P. M. Mooney, L. J. Cheng, M. Süli et al. · Physical review. B, Solid state · 1977 · 297 citations