John R. Troxell

Negative-U Properties for Point Defects in Silicon

G. D. Watkins, John R. Troxell · Physical Review Letters · 1980 · 326 citations

Point Defects, Engineering, Defect Tolerance +17

Interstitial boron in silicon: A negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

John R. Troxell, G. D. Watkins · Physical review. B, Condensed matter · 1980 · 140 citations

Electrical Level 0.45, Electrical Engineering, Boron Nitride +14

Recombination-enhanced migration of interstitial aluminum in silicon

John R. Troxell, Ashok Chatterjee, G. D. Watkins et al. · Physical review. B, Condensed matter · 1979 · 125 citations

Aluminium Nitride, Engineering, Recovery Rate +17

Ion-implantation associated defect production in silicon

John R. Troxell · Solid-State Electronics · 1983 · 74 citations

Ion Implantation, Applied Physics, Defect Production +2

Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate

John R. Troxell, Marie I. Harrington, J.C. Erskine et al. · IEEE Electron Device Letters · 1986 · 42 citations

Materials Science, Electrical Engineering, Engineering +14