Optical and crystal improvements of semipolar (11-22) GaN/m-sapphire by in-situ thermal etching process

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

Theeradetch Detchprohm, Kazumasa Hiramatsu, Kenji Itoh et al. · Japanese Journal of Applied Physics · 1992 · 268 citations

Wide-bandgap Semiconductor, Relaxation Process, Engineering +16

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

Ching-Hua Chiu, H. H. Yen, Chu‐Li Chao et al. · Applied Physics Letters · 2008 · 119 citations · Full text

Materials Science, Sapphire Template, Electrical Engineering +15

Defect reduction in nonpolar a-plane GaN films using <i>in situ</i> SiNx nanomask

Arpan Chakraborty, K. C. Kim, Feng Wu et al. · Applied Physics Letters · 2006 · 112 citations

Semiconductors, Materials Science, Electrical Engineering +12

Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

T. Gühne, Z. Bougrioua, P. Vennéguès et al. · Journal of Applied Physics · 2007 · 104 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +14

Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition

X. Ni, Ü. Özgür, A. A. Baski et al. · Applied Physics Letters · 2007 · 89 citations

Wide-bandgap Semiconductor, Engineering, M-plane Sapphire +16