Applied Physics Letters · 2008 · 119 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsEpitaxial GrowthLight-emitting DiodesSemiconductor Device MaterialsSemiconductor NanomaterialsWide-bandgap Semiconductor DevicesDislocation DensityEpitaxial Lateral OvergrowthExternal Quantum EfficiencyGallium Nitride Light-emitting DiodesLight ExtractionLight-emitting DevicesNanorodsQuantum Efficiency
High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS). The transmission electron microscopy images suggest that the voids between SiO2 nanorods and the stacking faults introduced during the NELO of GaN can effectively suppress the threading dislocation density. The output power and external quantum efficiency of the fabricated LED were enhanced by 52% and 56%, respectively, compared to those of a conventional LED. The improvements originated from both the enhanced light extraction assisted by the NAPSS and the reduced dislocation densities using the NELO method.
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E. Fred Schubert · Kirk-Othmer Encyclopedia of Chemical Technology · 2006 · 373 citations
AlGaN/GaN quantum well ultraviolet light emitting diodes
Jung Han, Mary H. Crawford, R. J. Shul et al. · Applied Physics Letters · 1998 · 252 citations
Engineering, Electrical Engineering, Materials Engineering +17