Directional reactive ion etching at oblique angles

Abstract

Directional reactive ion etching (RIE) at oblique angles is possible using a simple grid-covered structure (Faraday cage) in conventional parallel-plate sputter etching equipment. Oblique-angle etching, as is possible in any ion-beam system, has been demonstrated using the etchant ions from CHF3 gas on a fused-silica substrate. The first detailed measurements of the angular etch dependence of RIE show a strong similarity to those of an ion-beam system (no chemical etching).